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an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. mux506 , mux507 sbas803 ? november 2016 mux50x 36-v, low-capacitance, low-leakage-current, precision analog multiplexers 1 1 features 1 ? low on-capacitance ? mux506: 13.5 pf ? mux507: 8.7 pf ? low input leakage: 1 pa ? low charge injection: 0.31 pc ? rail-to-rail operation ? wide supply range: 5 v to 18 v, 10 v to 36 v ? low on-resistance: 125 ? transition time: 85 ns ? break-before-make switching action ? en pin connectable to v dd ? logic levels: 2 v to v dd ? low supply current: 45 a ? esd protection hbm: 2000 v ? industry-standard tssop package 2 applications ? factory automation and industrial process control ? programmable logic controllers (plc) ? analog input modules ? ate test equipment ? digital multimeters ? battery monitoring systems 3 description the mux506 and mux507 (mux50x) are modern complementary metal-oxide semiconductor (cmos) precision analog multiplexers (muxes). the mux506 offers 16:1 single-ended channels, whereas the mux507 offers differential 8:1 or dual 8:1 single- ended channels. the mux506 and mux507 work equally well with either dual supplies ( 5 v to 18 v) or a single supply (10 v to 36 v). these devices also perform well with symmetric supplies (such as v dd = 12 v, v ss = ? 12 v), and unsymmetric supplies (such as v dd = 12 v, v ss = ? 5 v). all digital inputs have transistor-transistor logic (ttl) compatible thresholds, providing both ttl and cmos logic compatibility when operating in the valid supply voltage range. the mux507 and mux507 have very low on- and off- leakage currents, allowing these multiplexers to switch signals from high input impedance sources with minimal error. a low supply current of 45 a enables use in power-sensitive applications. device information (1) part number package body size (nom) mux506 tssop (28) 9.70 mm 6.40 mm mux507 (1) for all available packages, see the package option addendum at the end of the data sheet. simplified schematic leakage current vs temperature adc v inp v inm analog inputs led photo detector bridge sensor thermocouple current sensing optical sensor pga/ina + mux507 temperature ( q c) leakage current (pa) -75 -50 -25 0 25 50 75 100 125 150 -2000 -1500 -1000 -500 0 500 1000 d006 i d(off)+ i s(off)+ i d(on)+ i d(off)- i s(off)- i d(on)- productfolder sample &buy technical documents tools & software support &community
2 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated table of contents 1 features .................................................................. 1 2 applications ........................................................... 1 3 description ............................................................. 1 4 revision history ..................................................... 2 5 pin configuration and functions ......................... 3 6 specifications ......................................................... 6 6.1 absolute maximum ratings ...................................... 6 6.2 esd ratings .............................................................. 6 6.3 recommended operating conditions ....................... 6 6.4 thermal information .................................................. 7 6.5 electrical characteristics: dual supply ..................... 7 6.6 electrical characteristics: single supply ................... 9 6.7 typical characteristics ............................................ 11 7 parameter measurement information ................ 16 7.1 truth tables ............................................................ 16 7.2 on-resistance ........................................................ 17 7.3 off leakage ............................................................. 17 7.4 on-leakage current ............................................... 18 7.5 transition time ....................................................... 18 7.6 break-before-make delay ....................................... 19 7.7 turn-on and turn-off time .................................... 20 7.8 charge injection ...................................................... 21 7.9 off isolation ............................................................. 22 7.10 channel-to-channel crosstalk .............................. 22 7.11 bandwidth ............................................................. 23 7.12 thd + noise ......................................................... 23 8 detailed description ............................................ 24 8.1 overview ................................................................. 24 8.2 functional block diagram ....................................... 24 8.3 feature description ................................................. 25 8.4 device functional modes ........................................ 27 9 applications and implementation ...................... 28 9.1 application information ............................................ 28 9.2 typical application ................................................. 28 10 power supply recommendations ..................... 30 11 layout ................................................................... 31 11.1 layout guidelines ................................................. 31 11.2 layout example .................................................... 31 12 device and documentation support ................. 33 12.1 documentation support ........................................ 33 12.2 related links ........................................................ 33 12.3 receiving notification of documentation updates 33 12.4 community resources .......................................... 33 12.5 trademarks ........................................................... 33 12.6 electrostatic discharge caution ............................ 33 12.7 glossary ................................................................ 33 13 mechanical, packaging, and orderable information ........................................................... 34 4 revision history date revision notes november 2016 * initial release
3 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 5 pin configuration and functions mux506: pw package 28-pin tssop top view pin functions: mux506 pin function description name no. a0 17 digital input address line 0 a1 16 digital input address line 1 a2 15 digital input address line 2 a3 14 digital input address line 3 d 28 analog input or output drain pin. can be an input or output. en 18 digital input active high digital input. when this pin is low, all switches are turned off. when this pin is high, the a[3:0] logic inputs determine which switch is turned on. gnd 12 power supply ground (0 v) reference nc 2, 3, 13 no connect do not connect s1 19 analog input or output source pin 1. can be an input or output. s2 20 analog input or output source pin 2. can be an input or output. s3 21 analog input or output source pin 3. can be an input or output. s4 22 analog input or output source pin 4. can be an input or output. s5 23 analog input or output source pin 5. can be an input or output. s6 24 analog input or output source pin 6. can be an input or output. s7 25 analog input or output source pin 7. can be an input or output. s8 26 analog input or output source pin 8. can be an input or output. s9 11 analog input or output source pin 9. can be an input or output. s10 10 analog input or output source pin 10. can be an input or output. 1 vdd 28 d 2 nc 27 vss 3 nc 26 s8 4 s16 25 s7 5 s15 24 s6 6 s14 23 s5 7 s13 22 s4 8 s12 21 s3 9 s11 20 s2 10 s10 19 s1 11 s9 18 en 12 gnd 17 a0 13 nc 16 a1 14 a3 15 a2 not to scale
4 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated pin functions: mux506 (continued) pin function description name no. s11 9 analog input or output source pin 11. can be an input or output. s12 8 analog input or output source pin 12. can be an input or output. s13 7 analog input or output source pin 13. can be an input or output. s14 6 analog input or output source pin 14. can be an input or output. s15 5 analog input or output source pin 15. can be an input or output. s16 4 analog input or output source pin 16. can be an input or output. vdd 1 power supply positive power supply. this pin is the most positive power-supply potential. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vdd and gnd. vss 27 power supply negative power supply. this pin is the most negative power-supply potential. in single- supply applications, this pin can be connected to ground. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vss and gnd. mux507: pw package 28-pin tssop top view pin functions: mux507 pin function description name no. a0 17 digital input address line 0 a1 16 digital input address line 1 a2 15 digital input address line 2 da 28 analog input or output drain pin a. can be an input or output. db 2 analog input or output drain pin b. can be an input or output. 1 vdd 28 da 2 db 27 vss 3 nc 26 s8a 4 s8b 25 s7a 5 s7b 24 s6a 6 s6b 23 s5a 7 s5b 22 s4a 8 s4b 21 s3a 9 s3b 20 s2a 10 s2b 19 s1a 11 s1b 18 en 12 gnd 17 a0 13 nc 16 a1 14 nc 15 a2 not to scale
5 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated pin functions: mux507 (continued) pin function description name no. en 18 digital input active high digital input. when this pin is low, all switches are turned off. when this pin is high, the a[2:0] logic inputs determine which pair of switches is turned on. gnd 12 power supply ground (0 v) reference nc 3, 13, 14 no connect do not connect s1a 19 analog input or output source pin 1a. can be an input or output. s2a 20 analog input or output source pin 2a. can be an input or output. s3a 21 analog input or output source pin 3a. can be an input or output. s4a 22 analog input or output source pin 4a. can be an input or output. s5a 23 analog input or output source pin 5a. can be an input or output. s6a 24 analog input or output source pin 6a. can be an input or output. s7a 25 analog input or output source pin 7a. can be an input or output. s8a 26 analog input or output source pin 8a. can be an input or output. s1b 11 analog input or output source pin 1b. can be an input or output. s2b 10 analog input or output source pin 2b. can be an input or output. s3b 9 analog input or output source pin 3b. can be an input or output. s4b 8 analog input or output source pin 4b. can be an input or output. s5b 7 analog input or output source pin 5b. can be an input or output. s6b 6 analog input or output source pin 6b. can be an input or output. s7b 5 analog input or output source pin 7b. can be an input or output. s8b 4 analog input or output source pin 8b. can be an input or output. vdd 1 power supply positive power supply. this pin is the most positive power supply potential. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vdd and gnd. vss 27 power supply negative power supply. this pin is the most negative power supply potential. in single- supply applications, this pin can be connected to ground. for reliable operation, connect a decoupling capacitor ranging from 0.1 f to 10 f between vss and gnd.
6 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions . exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) voltage limits are valid if current is limited to 30 ma. (3) only one pin at a time. 6 specifications 6.1 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) (1) min max unit voltage supply v dd ? 0.3 40 v v ss ? 40 0.3 v dd ? v ss 40 digital pins (2) : en, a0, a1, a2, a3 v ss ? 0.3 v dd + 0.3 analog pins (2) : sx, sxa, sxb, d, da, db v ss ? 2 v dd + 2 current (3) ? 30 30 ma temperature operating, t a ? 55 150 c junction, t j 150 storage, t stg ? 65 150 (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v cdm allows safe manufacturing with a standard esd control process. 6.2 esd ratings value unit v (esd) electrostatic discharge human-body model (hbm), per ansi/esda/jedec js-001 (1) 2000 v charged-device model (cdm), per jedec specification jesd22-c101 (2) 500 (1) when v ss = 0 v, v dd can range from 10 v to 36 v. (2) v dd and v ss can be any value as long as 10 v (v dd ? v ss ) 36 v. (3) v s is the voltage on all the s pins. 6.3 recommended operating conditions min nom max unit v dd (1) positive power-supply voltage dual supply 5 18 v single supply 10 36 v ss (2) negative power-supply voltage (dual supply) ? 5 ? 18 v v dd ? v ss supply voltage 10 36 v v s source pins voltage (3) v ss v dd v v d drain pins voltage v ss v dd v v en enable pin voltage v ss v dd v v a address pins voltage v ss v dd v i ch channel current (t a = 25 c) ? 25 25 ma t a operating temperature ? 40 125 c
7 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) for more information about traditional and new thermal metrics, see the semiconductor and ic package thermal metrics application report. 6.4 thermal information thermal metric (1) mux50x unit pw (tssop) 28 pins r ja junction-to-ambient thermal resistance 79.8 c/w r jc(top) junction-to-case (top) thermal resistance 24.0 c/w r jb junction-to-board thermal resistance 37.6 c/w jt junction-to-top characterization parameter 1.2 c/w jb junction-to-board characterization parameter 37.1 c/w r jc(bot) junction-to-case (bottom) thermal resistance n/a c/w (1) when v s is positive, v d is negative, and vice versa. 6.5 electrical characteristics: dual supply at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) parameter test conditions min typ max unit analog switch analog signal range t a = ? 40 c to +125 c v ss v dd v r on on-resistance v s = 0 v, i s = ? 1 ma 125 170 v s = 10 v, i s = ? 1 ma 145 200 t a = ? 40 c to +85 c 230 t a = ? 40 c to +125 c 250 r on on-resistance mismatch between channels v s = 10 v, i s = ? 1 ma 6 9 t a = ? 40 c to +85 c 14 t a = ? 40 c to +125 c 16 r flat on-resistance flatness v s = 10 v, 0 v, ? 10 v 20 45 t a = ? 40 c to +85 c 53 t a = ? 40 c to +125 c 58 on-resistance drift v s = 0 v 0.62 / c i s(off) input leakage current switch state is off, v s = 10 v, v d = 10 v (1) ? 1 ? 0.001 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 25 25 i d(off) output off-leakage current switch state is off, v s = 10 v, v d = 10 v (1) ? 1 ? 0.01 1 na t a = -40 c to +85 c ? 10 10 t a = -40 c to +125 c ? 25 25 i d(on) output on-leakage current switch state is on, v d = 10 v, v s = floating ? 1 ? 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 50 50 logic input v ih logic voltage high 2 v v il logic voltage low 0.8 v i d input current 0.1 a
8 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated electrical characteristics: dual supply (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) parameter test conditions min typ max unit (2) specified by design; not subject to production testing. switch dynamics (2) t on enable turn-on time v s = 10 v, r l = 300 , c l = 35 pf 82 136 ns t a = ? 40 c to +85 c 145 t a = ? 40 c to +125 c 151 t off enable turn-off time v s = 10 v, r l = 300 , c l = 35 pf 63 78 ns t a = ? 40 c to +85 c 89 t a = ? 40 c to +125 c 97 t t transition time v s = 10 v, r l = 300 , c l = 35 pf, 85 143 ns t a = ? 40 c to +85 c 151 t a = ? 40 c to +125 c 157 t bbm break-before-make time delay v s = 10 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 30 54 ns q j charge injection c l = 1 nf, r s = 0 v s = 0 v 0.31 pc v s = ? 15 v to +15 v 0.9 off-isolation r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channel to d, da, db ? 98 db adjacent channel to d, da, db ? 94 channel-to-channel crosstalk r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channels ? 100 db adjacent channels ? 88 c s(off) input off-capacitance f = 1 mhz, v s = 0 v 2.1 3 pf c d(off) output off-capacitance f = 1 mhz, v s = 0 v mux506 11.1 12.2 pf mux507 6.4 7.5 c s(on) , c d(on) output on-capacitance f = 1 mhz, v s = 0 v mux506 13.5 15 pf mux507 8.7 10.2 power supply v dd supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v, 45 59 a t a = ? 40 c to +85 c 62 t a = ? 40 c to +125 c 85 v ss supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v, 26 34 a t a = ? 40 c to +85 c 37 t a = ? 40 c to +125 c 58
9 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) when v s is 1 v, v d is 10 v, and vice versa. 6.6 electrical characteristics: single supply at t a = 25 c, v dd = 12 v, and v ss = 0 v (unless otherwise noted) parameter test conditions min typ max unit analog switch analog signal range t a = ? 40 c to +125 c v ss v dd v r on on-resistance v s = 10 v, i s = ? 1 ma 235 340 t a = ? 40 c to +85 c 390 t a = ? 40 c to +125 c 430 r on on-resistance match v s = 10 v, i s = ? 1 ma 7 20 t a = ? 40 c to +85 c 35 t a = ? 40 c to +125 c 40 on-resistance drift v s = 10 v 1.07 / c i s(off) input leakage current switch state is off, v s = 1 v and v d = 10 v, or v s = 10 v and v d = 1 v (1) ? 1 0.001 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 25 25 i d(off) output off leakage current switch state is off, v s = 1 v and v d = 10 v, or v s = 10 v and v d = 1 v (1) ? 1 0.01 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 25 25 i d(on) output on leakage current switch state is on, v d = 1 v and 10 v, v s = floating ? 1 0.02 1 na t a = ? 40 c to +85 c ? 10 10 t a = ? 40 c to +125 c ? 50 50 logic input v ih logic voltage high 2.0 v v il logic voltage low 0.8 v i d input current 0.1 a
10 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated electrical characteristics: single supply (continued) at t a = 25 c, v dd = 12 v, and v ss = 0 v (unless otherwise noted) parameter test conditions min typ max unit (2) specified by design, not subject to production test. switch dynamic characteristics (2) t on enable turn-on time v s = 8 v, r l = 300 , c l = 35 pf 90 145 ns t a = ? 40 c to +85 c 145 t a = ? 40 c to +125 c 149 t off enable turn-off time v s = 8 v, r l = 300 , c l = 35 pf 66 84 ns t a = ? 40 c to +85 c 94 t a = ? 40 c to +125 c 102 t t transition time v s = 8 v, c l = 35 pf 91 147 ns v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +85 c 153 v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 155 t bbm break-before-make time delay v s = 8 v, r l = 300 , c l = 35 pf, t a = ? 40 c to +125 c 30 54 ns q j charge injection c l = 1 nf, r s = 0 v s = 6 v 0.12 pc v s = 0 v to 12 v, 0.17 off-isolation r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channel to d, da, db ? 97 db adjacent channel to d, da, db ? 94 channel-to-channel crosstalk r l = 50 , v s = 1 v rms , f = 1 mhz nonadjacent channels ? 100 db adjacent channels -88 c s(off) input off-capacitance f = 1 mhz, v s = 6 v 2.4 3.4 pf c d(off) output off-capacitance f = 1 mhz, v s = 6 v mux506 14 15.4 pf mux507 7.8 9.1 c s(on) , c d(on) output on-capacitance f = 1 mhz, v s = 6 v mux506 16.2 18 pf mux507 9.9 11.6 power supply v dd supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v 41 59 a t a = ? 40 c to +85 c 62 t a = ? 40 c to +125 c 83 v ss supply current all v a = 0 v or 3.3 v, v s = 0 v, v en = 3.3 v 22 34 a t a = ? 40 c to +85 c 37 t a = ? 40 c to +125 c 57
11 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 6.7 typical characteristics at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) figure 1. on-resistance vs source or drain voltage v dd = 15 v, v ss = ? 15 v figure 2. on-resistance vs source or drain voltage figure 3. on-resistance vs source or drain voltage v dd = 12 v, v ss = 0 v figure 4. on-resistance vs source or drain voltage figure 5. on-resistance vs source or drain voltage figure 6. on-resistance vs source or drain voltage source or drain voltage (v) on resistance ( : ) 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 700 d005 v dd = 10 v, v ss = 0 v v dd = 12 v, v ss = 0 v v dd = 14 v, v ss = 0 v source or drain voltage (v) on resistance ( : ) -8 -6 -4 -2 0 2 4 6 8 100 200 300 400 500 600 700 d003 v dd = 5 v, v ss = -5 v v dd = 6 v, v ss = -6 v v dd = 7 v, v ss = -7 v source or drain voltage (v) on resistance ( : ) 0 2 4 6 8 10 12 0 100 200 300 400 500 600 700 d004 t a = -40 q c t a = 0 q c t a = 25 q c t a = 85 q c t a = 125 q c source or drain voltage (v) on resistance ( : ) -18 -14 -10 -6 -2 2 6 10 14 18 50 100 150 200 250 300 350 400 d001 v dd = 18 v, v ss = -18 v v dd = 16.5 v, v ss = -16.5 v v dd = 15 v, v ss = -15 v v dd = 13.5 v, v ss = -13.5 v v dd = 10 v, v ss = -10 v source or drain voltage (v) on resistance ( : ) -18 -14 -10 -6 -2 2 6 10 14 18 0 50 100 150 200 250 300 350 d002 t a = -40 q c t a = 0 q c t a = 25 q c t a = 90 q c t a = 125 q c source or drain voltage (v) on resistance ( : ) 0 6 12 18 24 30 36 0 50 100 150 200 250 d024 v dd = 30 v, v ss = 0 v v dd = 33 v, v ss = 0 v v dd = 36 v, v ss = 0 v
12 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) v dd = 24 v, v ss = 0 v figure 7. on-resistance vs source or drain voltage v dd = 12 v, v ss = ? 12 v figure 8. on-resistance vs source or drain voltage v dd = 15 v, v ss = ? 15 v figure 9. leakage current vs temperature t v dd = 12 v, v ss = 0 v figure 10. leakage current vs temperature mux506, source-to-drain figure 11. charge injection vs source voltage mux507, source-to-drain figure 12. charge injection vs source voltage source voltage (v) charge injection (pc) -15 -10 -5 0 5 10 15 -2 -1 0 1 2 d011 v dd = 15 v, v ss = -15 v v dd = 10 v, v ss = -10 v v dd = 12 v, v ss = 0 v v dd = 5 v, v ss = -5 v temperature ( q c) leakage current (pa) -75 -50 -25 0 25 50 75 100 125 150 -2000 -1500 -1000 -500 0 500 1000 d006 i d(off)+ i s(off)+ i d(on)+ i d(off)- i s(off)- i d(on)- source voltage (v) charge injection (pc) -15 -10 -5 0 5 10 15 -2 -1 0 1 2 d027 v dd = 15 v, v ss = -15 v v dd = 12 v, v ss = 0 v v dd = 10 v, v ss = -10 v v dd = 5 v, v ss = -5 v temperature ( q c) leakage current (pa) -75 -50 -25 0 25 50 75 100 125 150 -900 -600 -300 0 300 600 900 d007 i d(off)+ i s(off)+ i d(on)+ i d(off)- i s(off)- i d(on)- source or drain voltage (v) on resistance ( : ) 0 6 12 18 24 0 50 100 150 200 250 d025 source or drain voltage (v) on resistance ( : ) -12 -6 0 6 12 0 50 100 150 200 250 d026
13 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) drain-to-source figure 13. charge injection vs drain voltage figure 14. turn-on and turn-off times vs temperature figure 15. off isolation vs frequency figure 16. crosstalk vs frequency figure 17. thd+n vs frequency figure 18. on response vs frequency frequency (hz) on response (db) -30 -25 -20 -15 -10 -5 0 5 100k 1m 10m 100m 1g d021 frequency (hz) off isolation (db) -140 -120 -100 -80 -60 -40 -20 0 100k 1m 10m 100m 1g d012 adjacent channel to d (output) non-adjacent channel to d (output) frequency (hz) crosstalk (db) -140 -120 -100 -80 -60 -40 -20 0 100k 1m 10m 100m 1g d013 adjacent channels non-adjacent channels drain voltage (v) charge injection (pc) -15 -10 -5 0 5 10 15 -9 -6 -3 0 3 6 9 d008 v dd = 15 v, v ss = -15 v v dd = 10 v, v ss = -10 v v dd = 12 v, v ss = 0 v temperature ( q c) turn on and turn off times (ns) -75 -50 -25 0 25 50 75 100 125 150 0 30 60 90 120 150 d010 t off (v dd = 15 v, v ss = -15 v) t on (v dd = 15 v, v ss = -15 v) t off (v dd = 12 v, v ss = 0 v) t on (v dd = 12 v, v ss = 0 v) frequency (hz) thd+n (%) 0.01 0.1 1 10 100 10 100 1k 10k 100k d014 v dd = 15 v, v ss = -15 v v dd = 5 v, v ss = -5 v
14 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) mux506, v dd = 15 v, v ss = ? 15 v figure 19. capacitance vs source voltage mux507, v dd = 15 v, v ss = ? 15 v figure 20. capacitance vs source voltage mux506, v dd = 30 v, v ss = 0 v figure 21. capacitance vs source voltage mux507, v dd = 30 v, v ss = 0 v figure 22. capacitance vs source voltage mux506, v dd = 12 v, v ss = 0 v figure 23. capacitance vs source voltage mux507, v dd = 12 v, v ss = 0 v figure 24. capacitance vs source voltage source or drain voltage (v) capacitance (pf) 0 3 6 9 12 0 6 12 18 24 30 d019 c s(off) c d(off) c d(on) source or drain voltage (v) capacitance (pf) 0 3 6 9 12 0 6 12 18 24 30 c s(off) c d(off) c d(on) d020 source or drain voltage (v) capacitance (pf) 0 6 12 18 24 30 0 6 12 18 24 30 d017 c s(off) c d(off) c d(on) source or drain voltage (v) capacitance (pf) 0 6 12 18 24 30 0 6 12 18 24 30 d018 c s(off) c d(off) c d(on) source or drain voltage (v) capacitance (pf) -15 -10 -5 0 5 10 15 0 6 12 18 24 30 d015 c s(off) c d(off) c d(on) source or drain voltage (v) capacitance (pf) -15 -10 -5 0 5 10 15 0 6 12 18 24 30 d016 c s(off) c d(off) c d(on)
15 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated typical characteristics (continued) at t a = 25 c, v dd = 15 v, and v ss = ? 15 v (unless otherwise noted) figure 25. source current vs drain current source current (ma) drain current (ma) -25 -20 -15 -10 -5 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 5 10 15 20 25 d028
16 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated (1) x denotes don ' t care .. 7 parameter measurement information 7.1 truth tables table 1. mux506 en a3 a2 a1 a0 on-channel 0 x (1) x (1) x (1) x (1) all channels are off 1 0 0 0 0 channel 1 1 0 0 0 1 channel 2 1 0 0 1 0 channel 3 1 0 0 1 1 channel 4 1 0 1 0 0 channel 5 1 0 1 0 1 channel 6 1 0 1 1 0 channel 7 1 0 1 1 1 channel 8 1 1 0 0 0 channel 9 1 1 0 0 1 channel 10 1 1 0 1 0 channel 11 1 1 0 1 1 channel 12 1 1 1 0 0 channel 13 1 1 1 0 1 channel 14 1 1 1 1 0 channel 15 1 1 1 1 1 channel 16 (1) x denotes don ' t care . table 2. mux507 en a2 a1 a0 on-channel 0 x (1) x (1) x (1) all channels are off 1 0 0 0 channels 1a and 1b 1 0 0 1 channels 2a and 2b 1 0 1 0 channels 3a and 3b 1 0 1 1 channels 4a and 4b 1 1 0 0 channels 5a and 5b 1 1 0 1 channels 6a and 6b 1 1 1 0 channels 7a and 7b 1 1 1 1 channels 8a and 8b
17 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.2 on-resistance the on-resistance of the mux50x is the ohmic resistance across the source (sx, sxa, or sxb) and drain (d, da, or db) pins of the device. the on-resistance varies with input voltage and supply voltage. the symbol r on is used to denote on-resistance. the measurement setup used to measure r on is shown in figure 26 . voltage (v) and current (i ch ) are measured using this setup, and r on is computed as shown in equation 1 : r on = v / i ch (1) figure 26. on-resistance measurement setup 7.3 off leakage there are two types of leakage currents associated with a switch during the off state: 1. source off-leakage current 2. drain off-leakage current source leakage current is defined as the leakage current flowing into or out of the source pin when the switch is off. this current is denoted by the symbol i s(off) . drain leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is off. this current is denoted by the symbol i d(off) . the setup used to measure both off-leakage currents is shown in figure 27 figure 27. off-leakage measurement setup d v s v d a a i d (off) i s (off) s v d v s i ch s
18 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.4 on-leakage current on-leakage current is defined as the leakage current that flows into or out of the drain pin when the switch is in the on state. the source pin is left floating during the measurement. figure 28 shows the circuit used for measuring the on-leakage current, denoted by i d(on) . figure 28. on-leakage measurement setup 7.5 transition time transition time is defined as the time taken by the output of the mux50x to rise or fall to 90% of the transition after the digital address signal has fallen or risen to 50% of the transition. figure 29 shows the setup used to measure transition time, denoted by the symbol t t . figure 29. transition-time measurement setup 50% 50% t t 90% 90% output address signal (v in ) 3 v v in v dd vdd v ss vss v s1 v s16 300 ? 35 pf 2 v mux506 en a0 a1 a2 s1 s2-s15 s16 d gnd v s16 v s1 output 0 v t t copyright ? 2016, texas instruments incorporated a3 d v d s a i d (on) nc nc = no connection
19 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.6 break-before-make delay break-before-make delay is a safety feature that prevents two inputs from connecting when the mux50x is switching. the mux50x output first breaks from the on-state switch before making the connection with the next on-state switch. the time delay between the break and the make is known as break-before-make delay. figure 30 shows the setup used to measure break-before-make delay, denoted by the symbol t bbm . figure 30. break-before-make delay measurement setup v in v dd vdd v ss vss v s output 300 ? 35 pf 2 v mux506 en a0 a1 a2 s1 s2-s15 s16 d gnd 3 v address signal (v in ) 0 v output t bbm 80% 80% copyright ? 2016, texas instruments incorporated a3
20 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.7 turn-on and turn-off time turn-on time is defined as the time taken by the output of the mux50x to rise to 90% final value after the enable signal has risen to 50% final value. figure 31 shows the setup used to measure turn-on time. turn-on time is denoted by the symbol t on . turn off time is defined as the time taken by the output of the mux50x to fall to 10% initial value after the enable signal has fallen to 50% initial value. figure 31 shows the setup used to measure turn-off time. turn-off time is denoted by the symbol t off . figure 31. turn-on and turn-off time measurement setup v dd vdd v ss vss v s output 300 ? 35 pf mux506 en a0 a1 a2 s1 s2-s16 d gnd v in 3 v enable drive (v in ) 0 v 50% 50% t on (en) t off (en) 0.1 v s 0.9 v s output copyright ? 2016, texas instruments incorporated a3 v s 0 v
21 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.8 charge injection the mux50x have a simple transmission-gate topology. any mismatch in capacitance between the nmos and pmos transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. the amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol q inj . figure 32 shows the setup used to measure charge injection. figure 32. charge-injection measurement setup v dd vdd v ss vss mux506 a0 a1 a2 v en r s v s en s1 gnd c l 1 nf d v out v out v en 3 v v out q inj = c l v out copyright ? 2016, texas instruments incorporated 0 v a3
22 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.9 off isolation off isolation is defined as the voltage at the drain pin (d, da, or db) of the mux50x when a 1-v rms signal is applied to the source pin (sx, sxa, or sxb) of an off-channel. figure 33 shows the setup used to measure off isolation. use equation 2 to compute off isolation. figure 33. off isolation measurement setup (2) 7.10 channel-to-channel crosstalk channel-to-channel crosstalk is defined as the voltage at the source pin (sx, sxa, or sxb) of an off-channel, when a 1-v rms signal is applied at the source pin of an on-channel. figure 34 shows the setup used to measure channel-to-channel crosstalk. use equation 3 to compute, channel-to-channel crosstalk. figure 34. channel-to-channel crosstalk measurement setup (3) v dd v ss network analyzer v out s d 50 ? v s vdd vss 0.1 f 0.1 f gnd r l 50 ? 50 out s v channel-to-channel crosstalk 20 log v ? ? ? 1 network analyzer s1 s2 v s v out v dd vdd v ss vss 0.1 f 0.1 f r l 50 ? r 50 ? gnd out s v off isolation 20 log v ? ? ? 1
23 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 7.11 bandwidth bandwidth is defined as the range of frequencies that are attenuated by less than 3 db when the input is applied to the source pin of an on-channel, and the output measured at the drain pin of the mux50x. figure 35 shows the setup used to measure bandwidth of the mux. use equation 4 to compute the attenuation. figure 35. bandwidth measurement setup (4) 7.12 thd + noise the total harmonic distortion (thd) of a signal is a measurement of the harmonic distortion, and is defined as the ratio of the sum of the powers of all harmonic components to the power of the fundamental frequency at the mux output. the on-resistance of the mux50x varies with the amplitude of the input signal and results in distortion when the drain pin is connected to a low-impedance load. total harmonic distortion plus noise is denoted as thd+n. figure 36 shows the setup used to measure thd+n of the mux50x. figure 36. thd+n measurement setup v dd v dd v ss v ss gnd 0.1 f 0.1 f audio precision v out s d v s r l 10 n? 5 v rms in v in r s 2 1 v attenuation 20 log v ? ? ? 1 network analyzer v out s d v s v 1 v 2 v dd vdd v ss vss 0.1 f 0.1 f r l 50 ? 50 gnd
24 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 8 detailed description 8.1 overview the mux50x are a family of analog multiplexers. the functional block diagram section provides a top-level block diagram of both the mux506 and mux507. the mux506 is a 16-channel, single-ended, analog mux. the mux507 is an 8-channel, differential or dual 8:1, single-ended, analog mux. each channel is turned on or turned off based on the state of the address lines and enable pin. 8.2 functional block diagram s1 s2 s15 a0 a1 a2 en 1-of-16 decoder mux506 s8 s9 s14 a0 a1 db en 1-of-8 decoder mux507 s1a s2a s7a s1b s2b s7b da copyright ? 2016, texas instruments incorporated a3 s16 a2 s8a s8b s3 d
25 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 8.3 feature description 8.3.1 ultralow leakage current the mux50x provide extremely low on- and off-leakage currents. the mux50x are capable of switching signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error because of the ultra-low leakage currents. figure 37 shows typical leakage currents of the mux50x versus temperature. figure 37. leakage current vs temperature 8.3.2 ultralow charge injection the mux50x have a simple transmission gate topology, as shown in figure 38 . any mismatch in the stray capacitance associated with the nmos and pmos causes an output level change whenever the switch is opened or closed. figure 38. transmission gate topology temperature ( q c) leakage current (pa) -75 -50 -25 0 25 50 75 100 125 150 -2000 -1500 -1000 -500 0 500 1000 d006 i d(off)+ i s(off)+ i d(on)+ i d(off)- i s(off)- i d(on)- s d c gdp c gdn c gsn c gsp off on off on
26 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated feature description (continued) the mux50x have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to as low as 0.31 pc at v s = 0 v, and 0.9 pc in the full signal range, as shown in figure 39 . figure 39. source-to-drain charge injection the drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux), where d becomes the input and sx becomes the output. figure 40 shows the drain-to-source charge injection across the full signal range. figure 40. drain-to-source charge injection drain voltage (v) charge injection (pc) -15 -10 -5 0 5 10 15 -9 -6 -3 0 3 6 9 d008 v dd = 15 v, v ss = -15 v v dd = 10 v, v ss = -10 v v dd = 12 v, v ss = 0 v source voltage (v) charge injection (pc) -15 -10 -5 0 5 10 15 -2 -1 0 1 2 d011 v dd = 15 v, v ss = -15 v v dd = 10 v, v ss = -10 v v dd = 12 v, v ss = 0 v v dd = 5 v, v ss = -5 v
27 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated feature description (continued) 8.3.3 bidirectional operation the mux50x are operable as both a mux and demux. the source (sx, sxa, sxb) and drain (d, da, db) pins of the mux50x are used either as input or output. each mux50x channel has very similar characteristics in both directions. 8.3.4 rail-to-rail operation the valid analog signal for the mux50x ranges from v ss to v dd . the input signal to the mux50x swings from v ss to v dd without any significant degradation in performance. the on-resistance of the mux50x varies with input signal, as shown in figure 41 figure 41. on-resistance vs source or drain voltage 8.4 device functional modes when the en pin of the mux50x is pulled high, one of the switches is closed based on the state of the address lines. when the en pin is pulled low, all the switches are in an open state irrespective of the state of the address lines. the en pin can be connected to v dd (as high as 36 v). source or drain voltage (v) on resistance ( : ) -18 -14 -10 -6 -2 2 6 10 14 18 50 100 150 200 250 300 350 400 d001 v dd = 18 v, v ss = -18 v v dd = 16.5 v, v ss = -16.5 v v dd = 15 v, v ss = -15 v v dd = 13.5 v, v ss = -13.5 v v dd = 10 v, v ss = -10 v
28 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 9 applications and implementation 9.1 application information the mux50x family offers outstanding input/output leakage currents and ultra-low charge injection. these devices operate up to 36 v, and offer true rail-to-rail input and output. the on-capacitance of the mux50x is very low. these features makes the mux50x a family of precision, robust, high-performance analog multiplexer for high-voltage, industrial applications. 9.2 typical application figure 42 shows a 16-bit, differential, 8-channel, multiplexed, data-acquisition system. this example is typical in industrial applications that require low distortion and a high-voltage differential input. the circuit uses the ads8864 , a 16-bit, 400-ksps successive-approximation-resistor (sar) analog-to-digital converter (adc), along with a precision, high-voltage, signal-conditioning front end, and a 4-channel differential mux. this ti precision design details the process for optimizing the precision, high-voltage, front-end drive circuit using the mux507, opa192 and opa140 to achieve excellent dynamic performance and linearity with the ads8864. figure 42. 16-bit precision multiplexed data-acquisition system for high-voltage inputs with lowest distortion 9.2.1 design requirements the primary objective is to design a 20 v, differential, 8-channel, multiplexed, data-acquisition system with lowest distortion using the 16-bit ads8864 at a throughput of 400 ksps for a 10-khz, full-scale, pure, sine-wave input. the design requirements for this block design are: ? system supply voltage: 15 v ? adc supply voltage: 3.3 v ? adc sampling rate: 400 ksps ? adc reference voltage (refp): 4.096 v ? system input signal: a high-voltage differential input signal with a peak amplitude of 20 v and frequency (f in ) of 10 khz are applied to each differential input of the mux. ads8864 ref v inp v inm + + + charge kickback filter gain network gain network gain network gain network high-voltage level translation vcm high-voltage multiplexed input reference driver ref3140 rc filter opa350 rc filter analog inputs led photo detector bridge sensor thermocouple current sensing optical sensor opa192 opa192 opa140 mux507 copyright ? 2016, texas instruments incorporated
29 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated typical application (continued) 9.2.2 detailed design procedure the purpose of this precision design is to design an optimal, high-voltage, multiplexed, data-acquisition system for highest system linearity and fast settling. the overall system block diagram is illustrated in figure 42 . the circuit is a multichannel, data-acquisition signal chain consisting of an input low-pass filter, mux, mux output buffer, attenuating sar adc driver, and the reference driver. the architecture allows fast sampling of multiple channels using a single adc, providing a low-cost solution. this design systematically approaches each analog circuit block to achieve a 16-bit settling for a full-scale input stage voltage and linearity for a 10-khz sinusoidal input signal at each input channel. detailed design considerations and component selection procedure can be found in the ti precision design tipd151 , 16-bit, 400-ksps, 4-channel multiplexed data-acquisition system for high-voltage inputs with lowest distortion . 9.2.3 application curve figure 43. adc 16-bit linearity error for the multiplexed data-acquisition block 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 20 15 10 5 0 5 10 15 20 integral non-linearity (lsb) adc differential peak-to-peak input (v) c030
30 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 10 power supply recommendations the mux50x operates across a wide supply range of 5 v to 18 v (10 v to 36 v in single-supply mode). the devices also perform well with unsymmetric supplies such as v dd = 12 v and v ss = ? 5 v. for reliable operation, use a supply decoupling capacitor ranging between 0.1 f to 10 f at both the vdd and vss pins to ground. the on-resistance of the mux50x varies with supply voltage, as illustrated in figure 44 figure 44. on-resistance variation with supply and input voltage source or drain voltage (v) on resistance ( : ) -18 -14 -10 -6 -2 2 6 10 14 18 50 100 150 200 250 300 350 400 d001 v dd = 18 v, v ss = -18 v v dd = 16.5 v, v ss = -16.5 v v dd = 15 v, v ss = -15 v v dd = 13.5 v, v ss = -13.5 v v dd = 10 v, v ss = -10 v
31 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 11 layout 11.1 layout guidelines figure 45 illustrates an example of a pcb layout with the mux506ipw, and figure 46 illustrates an example of a pcb layout with mux507ipw. some key considerations are: 1. decouple the vdd and vss pins with a 0.1- f capacitor, placed as close to the pin as possible. make sure that the capacitor voltage rating is sufficient for the v dd and v ss supplies. 2. keep the input lines as short as possible. in case of the differential signal, make sure the a inputs and b inputs are as symmetric as possible. 3. use a solid ground plane to help distribute heat and reduce electromagnetic interference (emi) noise pickup. 4. do not run sensitive analog traces in parallel with digital traces. avoid crossing digital and analog traces if possible, and only make perpendicular crossings when necessary. 11.2 layout example figure 45. mux506ipw layout example c c via to gnd plane via to gnd plane via to gnd plane v dd nc nc s16 s15 s14 s13 s12 s11 s10 s9 gnd nc a3 d v ss s8 s7 s6 s5 s4 s3 s2 s1 en a0 a1 a2 mux506ipw
32 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated layout example (continued) figure 46. mux507ipw layout example c c via to gnd plane via to gnd plane via to gnd plane v dd db nc s8b s7b s6b s5b s4b s3b s2b s1b gnd nc nc da v ss s8a s7a s6a s5a s4a s3a s2a s1a en a0 a1 a2 mux507ipw
33 mux506 , mux507 www.ti.com sbas803 ? november 2016 product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 12 device and documentation support 12.1 documentation support 12.1.1 related documentation for related documentation see the following: ? ads8864 16-bit, 400-ksps, serial interface, micropower, miniature, single-ended input, sar analog-to- digital converter (sbas572) ? opax192 36-v, precision, rail-to-rail input/output, low offset voltage, low input bias current op amp with e-trim (sbos620) ? opax140 high-precision, low-noise, rail-to-rail output, 11-mhz jfet op amp (sbos498) 12.2 related links the following table lists quick access links. categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. table 3. related links parts product folder sample & buy technical documents tools & software support & community mux506 click here click here click here click here click here mux507 click here click here click here click here click here 12.3 receiving notification of documentation updates to receive notification of documentation updates, navigate to the device product folder on ti.com. in the upper right corner, click on alert me to register and receive a weekly digest of any product information that has changed. for change details, review the revision history included in any revised document. 12.4 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support. 12.5 trademarks e2e is a trademark of texas instruments. all other trademarks are the property of their respective owners. 12.6 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.7 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions.
34 mux506 , mux507 sbas803 ? november 2016 www.ti.com product folder links: mux506 mux507 submit documentation feedback copyright ? 2016, texas instruments incorporated 13 mechanical, packaging, and orderable information the following pages include mechanical, packaging, and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation.
package option addendum www.ti.com 4-dec-2016 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples mux506ipw preview tssop pw 28 50 tbd call ti call ti -40 to 125 mux506ipwr preview tssop pw 28 2000 tbd call ti call ti -40 to 125 mux507ipw preview tssop pw 28 50 tbd call ti call ti -40 to 125 mux507ipwr preview tssop pw 28 2000 tbd call ti call ti -40 to 125 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release.
package option addendum www.ti.com 4-dec-2016 addendum-page 2 in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.

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